UNIT I

P-N JUNCTION DIODE

8

V-I characteristics - static and dynamic resistance, Temperature dependence of characteristics, diffusion and transition capacitances, Diode as a circuit element, small signal and large signal models. Diode switching times, p-n junction diode ratings. Breakdown phenomena in diodes - zener diodes. The metal - semiconductor junction - Schottky barrier diodes. 

UNIT II

bipolar junction transistor

9

Physical behaviour of a BJT - Ebers - Moll model, large signal current gains. Modes of transistor operation - Common base, common emitter and common collector configurations, Input and output characteristics, Early effect,  regions of operation. AC and DC load lines - Need for stability of Q-Point. Bias stability -fixed bias, collector to base bias, self bias. Transistor switching times. High frequency effects.  BJT ratings.    

UNIT III

field effect transistor

JFET operation - V-I characteristics, transfer characteristics, regions of operation. DC analysis - JFET biasing. Small signal JFET model, JFET as a switch, voltage variable resistor and an amplifier.

mosfet: Constructional details - Operation of enhancement and depletion type MOSFETs , V-I characteristics, transfer characteristics, Comparison of PMOS and NMOS devices.

UNIT IV

DEVICE fabrication

Monolithic IC technology - Planar processes, Epitaxial growth, Oxidation, Photolithography, Diffusion, Ion implantation, metallization.  BJT fabrication - need for buried layer, Junction and dielectric isolation, Fabrication of p-n-p, multiple emitter transistors. Monolithic diodes. Fabrication of FETs, NMOS enhancement and depletion MOSFETs, self isolation, CMOS technology. Monolithic IC Resistors: sheet resistance - diffused, ion implanted, epitaxial, pinch, MOS and thin film resistors. Monolithic IC capacitors - junction, MOS and thin film capacitors. IC packaging.  Microelectronic circuit layout.                             

UNIT V

SPECIAL SEMICONDUCTOR DEVICES (Qualitative Treatment only)         

11

Tunnel diodes - PIN diode, varactor diode - SCR characteristics and two transistor equivalent model - UJT - Diac and Triac - Laser, CCD, Photodiode, Phototransistor, Photoconductive and Photovoltaic cells - LED, LCD.

TOTAL : 45

TEXT BOOKS:

Sl. No. 

Author(s) 

Title of the Book 

Publisher 

Year of Publication 

1.

Millman J and Grabel A

Microelectronics

Tata McGraw-Hill Publishing Company Ltd., New Delhi, Third Edition.

2000

2.

Boylestead L R and Nashelsky L

Electronic Devices and Circuit theory

Pearson Education India, New Delhi,  Ninth Edition

2006

REFERENCE BOOKS:

Sl. No. 

Author(s) 

Title of the Book 

Publisher 

Year of Publication 

1.

Adel S Sedra and Kenneth C Smith

Microelectronic Circuits

Oxford University Press, Newyork, Fourth Edition

1998

2.

Thomas L Floyd

Electronic Devices

Pearson Education India, New Delhi, Seventh Edition.

2007

3.

David A Bell

Electronic Devices and Circuits

Prentice Hall of India, New Delhi, Fourth Edition.

2000

WEB URLs:

• http://www.electronics-tutorials.ws/diode/diode_3.html

• http://www.allaboutcircuits.com/vol_3/chpt_4/1.html

• http://www.tpub.com/neets/book7/26i.htm

• http://www.icknowledge.com/misc_technology/fundamentalprinciples.html